摘要
纳米尺度线宽的测量在半导体集成电路制造业、数据存储工业以及微机电系统等领域广泛应用。随着制造技术的进步,线宽的临界尺寸也变得越来越小,目前已经缩小至100 nm左右。在这一尺度范围内,由于样本制造技术的限制和测量仪器的影响,很难得到精确的测量结果。针对目前纳米尺度线宽测量的研究状况,分析了这一领域的主要研究内容和面临的问题。
Nano-scale linewidth measurements are widely applied in semiconductor manufacturing, data storage industry and micro-mechanical engineering. With the development of manufacturing technology in recent years, the sizes of linewidths have been steadily smaller and have been in the range of hundreds of nanometers. As a result, it is difficult to achieve accurate measurement results for nano-scale linewidth, because of the limitation of manufacturing technology and the influence of measuring instrument. On the basis of current surveying researching condition of linewidth measurement,analysis the primary researching content and the problem of this field are analyzed.
出处
《东北电力学院学报》
2004年第4期15-21,25,共8页
Journal of Northeast China Institute of Electric Power Engineering
基金
哈尔滨工业大学校科研基金(HIT2002.28)
