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寻求最终亚-50纳米CMOS器件结构(英文)

Quest for the Ultimate Sub-50 nm CMOS Transistor Structure
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摘要 主要介绍了对各种非典型CMOS结构的研究 ,从而寻求最终的结构模式适应不断变化的CMOS发展技术 . In this paper, the work is introduced on investigation on non classical CMOS structure in the quest to find the ultimate transistor structure that will permit evolutionary improvements of the existing CMOS technology base.
出处 《南京师范大学学报(工程技术版)》 CAS 2003年第4期51-54,共4页 Journal of Nanjing Normal University(Engineering and Technology Edition)
关键词 CMOS器件 非典型结构 晶体管结构 CMOS, non classical CMOS structure,transistor structure
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参考文献3

  • 1[1]Wong H S P. Design and performance considerations for sub-0.1μm doubel-gate SOI MOSFETs[A]. International Electronic Device Meeting,1994.
  • 2[2]Wong H S P, Chan K K, Taur Y. Self-aligned doubel-gate MOSFET with a 25nm thick channel[A]. International Electronic Device Meeting,1997.427~430.
  • 3[3]Wong H S P, Frank D J, Solomon P M. Device design considerations for double-gate, ground plane, and single-gated ultra-thin SOI MOSFETs at the 25nm channel length[A]. International Electronic Device Meeting,1998.407~410.

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