一种克服SOI MOSFET器件自加热效应的方法(英文)

A Method to Overcome Self-Heating Effects in SOI MOSFETs

MOS器件的自加热效应将影响器件的性能 .漏极电流将减小 ,长时间的可靠性也会受到影响 .在SOI器件中 ,自加热甚至比埋葬式氧化物引起的问题更严重 .本文通过在SOI和基片之间增加一条具有高导热和低导电的路径 。

Self heating of a MOS device will reduce performance. Drain current decreases and long term reliability can be affected. In SOI devices, self heating is an even greater problem due to the buried oxide. By adding a path from SOI to substrate that has a high thermal conductivity and low electrical conductivity, the negative effects of self heating can be reduced.