800nm Semiconductor Absorber with Low Temp erature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti:Al_2O_3 Laser
用800nm表面态方法和低温方法结合吸收区的半导体可饱和吸收镜实现掺钛蓝宝石激光克尔镜锁模(英文)
摘要
A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror wit h low temperature method and surface state method combined absorber is presented .With which passive Kerr lens mode locking of Ti∶Al 2O 3 laser pumped by argo n ion laser is realized,which produces pulses as short as 40fs.The spectrum band width is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.
研制了一种新型的 80 0 nm布拉格反射镜型半导体可饱和吸收镜 ,其吸收区是低温方法和表面态方法相结合 .用该吸收体实现了氩离子激光器泵浦的掺钛蓝宝石激光器被动锁模 ,脉冲宽度达到 4 0 fs,光谱带宽为 5 6 nm,后者意味着它可以支持 2 0 fs的锁模 .脉冲序列的重复率为 97.5 MHz,泵浦源为 4 .4 5 W下平均输出功率为 30 0 m W.
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