摘要
我们采用蒙特卡洛方法模拟了100keV电子通过W Cr Si3N4掩膜的透射率。发现在此高能量下,电子弹性散射的Mott截面与经典的Rutherford截面仍有较大差异。由于这两种总截面和小角散射的微分截面不同,因此采用何种截面将直接影响限角散射电子束投影成像的模拟结果。本文通过比较电子透射的实验测量和模拟计算结果,确认了使用Mott截面的必要性。
We have employed Mott cross section for electron elastic scattering in a Monte Carlo simulation of electron scattering and transmission through W/Cr/Si_3N_4 membrane masks.It was found that this quantum mechanical cross section deviates from the classical Rutherford cross section at energy even as high as 100 keV.This difference,not only on the total cross section but also on the differential cross section in the small angular range(θ<3°) affects the contrast simulation for scattering with angular limitation in projection electron lithography(SCALPEL).In this paper a comparison on the contrast and electron transmission between an experiment and simulation results has been made.
出处
《电子显微学报》
CAS
CSCD
北大核心
2004年第5期571-574,共4页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金资助项目(No.10025420
20075026
90206009)
教育部博士点基金资助项目.
关键词
总截面
电子弹性散射
微分截面
弹性散射截面
投影
透射
蒙特卡洛方法
r/S
高能量
成像
cross section for electron elastic scattering
Monte Carlo simulation
membrane masks
scattering with angular limitation in projection electron lithography(SCALPEL)
