摘要
A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.
以深刻蚀和热氧化工艺为基础 ,提出了一种新的阵列波导光栅 (AWG)制备技术 .这一工艺可使 AWG中的波导侧向留有一硅层 .采用有限元法和有限差分束传播法分别计算了存在这一硅层时的波导应力分布和有效折射率 .结果表明由于这一侧向硅层的存在 ,使 AWG中波导在水平和垂直方向的应力趋于一致 。
基金
国家重点基础研究发展规划 (批准号 :G2 0 0 0 0 3 660 2 )
国家高技术研究发展计划(批准号 :2 0 0 2 AA3 12 2 60 )
国家自然科学基金 (批准号 :6988970 1)资助项目~~