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基于自会聚多光束阵列的薄膜应力传感器 被引量:4

A Kind of Thin-Film Stress Sensor Based on Beam-Focusing Multi-Beam Array
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摘要 介绍了一种通过分析二元光束阵列的反射光图像 ,利用 Stoney方程解算出薄膜应力的在线测量传感器 .传感器是以二维 Damm ann光栅和 Fresnel波带板所组成的集成二元光学分束器为核心设计的 .该传感器可进行各种单晶、多晶和非晶结构材料沉积过程的现场应力测量 ,灵敏度优于 2 .5× 10 6 Pa,精度优于 4 .2 7% .它具有结构简单、测量速度快、适应性强、设备集成度高而且易于安装调试等特点 .与计算机自动控制系统相结合 。 A new sensor measuring in real time is introduced,which is based on the analysis of the reflected light images of the binary optical array and the solution of Stoney equation.The sensor is designed with the core of a binary optical splitter,which is made up of a two-dimension Dammann grating and a Fresnel zone plate.With the sensitivity over 2.5×10 6Pa and precision over 4.27%,it can be used in the in-situ stress measurement of the materials with structures such as single-crystal,multi-crystal,or non-crystal in their deposition process.Also it has advantages of simple structure,high speed,powerful adaptability,high integration,and easy fitting.Combined with the computer automatic control system,the sensor can be used in the measurement and control of thin-film growth in the product line of semiconductor integrated circuits.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第11期1491-1495,共5页 半导体学报(英文版)
基金 陕西省自然科学基金 (编号 :2 0 0 2 F13 ) 西安电子科技大学青年研究基金 (编号 :0 3 0 0 3 )资助项目~~
关键词 二元光学分束器 薄膜应力 现场传感器 测量精度 binary optical splitter thin film stress in-situ sensor measurement precision
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参考文献6

  • 1Yang Yintang,Fu Junxing,Zhou Duan,et al.Thin film stress measurement instrument used in semiconductor samples.China Journal of Scientific Instrument,1997,18(3):298(in Chinese)[杨银堂,付俊兴,周端,等.半导体基片上薄膜应力的
  • 2Bicker M,Von Hülsen U,Laudahn U,et al.Optical deflection setup for stress measurements in thin films.Review of Scientific Instruments,1998,69(2):460
  • 3Stoney G.The tensions of metallic films deposited by elec-trolysis.In:Proc Roy Soc,London,1909:82
  • 4Breiland W G,Killeen K P.A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance.J Appl Phys,1995,78(11):6726
  • 5张国炳,郝一龙,田大宇,刘诗美,王铁松,武国英.多晶硅薄膜应力特性研究[J].Journal of Semiconductors,1999,20(6):463-467. 被引量:25
  • 6赵永军,王民娟,杨拥军,梁春广.PECVD SiN_x薄膜应力的研究[J].Journal of Semiconductors,1999,20(3):183-187. 被引量:22

二级参考文献2

  • 1Wu Guoying,IEEE Proc 11th VMIC,1994年,221页
  • 2Huang J,Mater Res Soc Proc,1990年,182卷,201页

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