摘要
分析比较了在不同外延生长条件下 Ga N基高 In组分绿光 L ED材料室温和低温 10 K下光致发光谱中蓝带发光峰 ,研究了外延结构中 p型层蓝带峰发光特性对材料晶体质量和器件电光转换效率的影响 .结果表明 :通过优化 p型层的外延生长条件 ,可有效降低和消除其蓝带发光峰较之多量子阱主峰的相对强度 ,有利于提高 L ED器件特别是高 In组分绿光 L ED器件在同等注入电流条件下的发光功率 .
The influence of blue-band emission in GaN-based green light emitting diode(LED) materials on the electro-optical conversion efficiency of device is studied by photoluminescence(PL) spectra at room temperature and low temperature 10K.The blue-band emission characteristics of samples with different epitaxy conditions are carefully compared.The results show that the optical output power of device could be dramatically improved by the decrease or elimination of blue-band emission,which mainly originates from the crystal defects on the p-type layer of the LED-structure especially for the green LED materials with high indium contents on the MQW-active layer.
基金
国家自然科学基金 (批准号 :60 2 44 0 0 1)
国家高技术研究发展计划 (批准号 :2 0 0 1AA3 12 190
2 0 0 1AA3 13 13 0 )
国家重点基础研究发展规划(批准号 :TG2 0 0 0 0 3 660 1)资助项目~~
