GaAs中准分子激光诱导掺Zn和Si的研究

A Study on Excimer Laser Doping of Si and Zn in GaAs

本文报导了用XeCl激光器实现向半绝缘GaAs衬底掺Zn的实验结果,给出了Zn原子的纵向分布以及掺杂后方块电阻与激光脉冲次数的关系曲线,同时在相同衬底上采用气体源进行了掺Si实验研究.

This paper reports the results of semi-insulating GaAs doped with zinc and silicon by using excimer laser and the depth profiles of dopant distribution in the GaAs substrates. The relationship between sheet resistance (Ω/□) and pulse number is discussed.