摘要
采用电导数测量技术,测量了质子轰击型GaAs/GaAlAs激光器的器件参数,探讨了这些参数与半导体激光器可靠性的关系.
The present paper covers some experimental results about the device parameters and degradation of GaAs/GaAlAs proton bombarded lasers. These experimental results were measured by electrical derivative technics. The above results are discussed.
出处
《吉林大学自然科学学报》
CAS
CSCD
1993年第2期51-54,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
国家自然科学基金
关键词
半导体激光器
器件参数
可靠性
semiconductor laser, device parameter, reliability
