一个描述硅原子团簇退火行为的模型

A Model Describing Annealing of Si Clusters

在考虑硅原子团簇的尺寸对其俘获半径的影响的基础上提出了一个改进的模型 ,来描述团簇的退火行为 ,并给出了点缺陷的表面复合速率的表达式 .为了验证此模型 ,给出了动力学蒙特卡洛方法的模拟结果 ,模拟结果与实验结果相吻合 .通过表面复合速率的模拟结果和模型的对比 ,模型得到了验证 .

An improved model that considering the impact of si ze of Si clusters on the capturing radius of clusters is presented to describe t he behavior of clusters under annealing.The velocity that point defects get anni hilated at surface is given out.In order to verify the model,the kinetic Monte C arlo method is used to simulate the annealing of Si clusters.The simulation resu lts agree with the experiments.The agreement between the velocity of surface ann ihilation achieved from simulation and the model validates the model.The analysi s indicates that the impact of clusters' size on the behavior of clusters under annealing is obvious.