CdSe核辐射探测器中的MIS接触电极

MIS Contacts in CdSe Nuclear Radiation Detectors

对 MIS(金属 -绝缘体 -半导体 )接触电极的特性进行了系统的分析和实验观察 .结果表明 ,负极的电子可以通过表面能级和热激发注入到 Cd Se晶片中 ,且晶片表面的电子能级密度越高 ,电子注入就越快 ,探测器的漏电流也越大 .对探测器进行适当的热处理 ,可以降低表面能级密度 ,从而抑制电子注入 ,降低探测器的漏电流 ,改善探测器的能量分辨率 .

The properties of MIS(metal-insulator-semiconductor) contacts in CdSe nuclear radiation detectors at room temperature are investigated by measuring the leaka ge current of CdSe detectors.It is shown that electrons can be injected from cat hode into CdSe wafers by means of surface trap levels and thermal exciting,and t he more the surface trap levels,the lager the leakage current of CdSe detector.T he density of surface trap levels can be lowered by annealing,so the leakage cur rent of CdSe detectors can be decreased and the energy resolution can be improve d too.