SOI热光开关调制区结构与速度和功耗关系的有限元法分析

Analyses of Relations between Modulating Area Structure and Switch Speed and Power Consumption of SOI Thermo-Optic Switch Based on Finite Element Method

利用有限元法分析了调制区内二维温度场的静态和动态分布 .结果表明 ,上包层 Si O2 厚度的减小 ,有利于开关速度的提高和功耗的减小 .增加埋层 Si O2 的厚度或引入绝缘槽 ,能有效降低器件功耗 ,但开关时间随之增加 .电极的尺寸对开关性能影响较小 .如果采用全体硅材料制作光开关 ,开关速度能达到 5 μs,但功耗将增至 0 .92 W.

Two-dimensional finite e l ement method is applied to simulate the temperature field of the modulating area .Meanwhile,switching time and power cons umption are determined.The results show switches will exhibit faster switching s peed and lower power consumption if the thickness of upper cladding layer is red uced.T he increase of buried SiO 2 thickness or introduction of grooves on both sides o f modulating area will result in the dec rease of power consumption,however,switc hing time will increase.The change of el ectrode geometry size affects on switch characters weakly.Furthermore,if the swi tch is fabricated with body silicon syst em,the speed of switching will reach to 5μs,but the consumption will increase up to 0.92W.