摘要
在 SIMOX和 Smart- cut SOI衬底上采用 L OCOS和 MESA隔离技术制备了部分耗尽 PMOSFET,虽然 L O-COS隔离器件的阈值电压较小 ,但其跨导和空穴迁移率明显小于 MESA隔离器件 .模拟表明 ,L OCOS场氧生长过程中 ,由于 Si O2 体积膨胀 ,在硅膜中形成较大的压应力 ,从而降低了空穴的迁移率 .
Partially depleted SOI PMOSFETs isolated by LOCOS a nd MESA are fabricated on SIMOX and smart-cut substrates.Though the threshold v oltage of PMOS isolated by LOCOS is lower,the transconductance and hole mobility are clearly lower than its counterpart of MESA.The simulation shows that the re duced hole mobility is attributed to the increased compressive stress of the sil icon film,resulting from high volumetric expansion of the field oxide in the cas e of LOCOS isolation.
