Be等电子序列高激发态结构(J=0,1,2,偶宇称)

Highly-excited State Structure of the Beryllium Isoelectronic Sequence whit J=0, 1 and 2 and Even Parity

本文应用本征通道量子亏损理论(EQDT)系统地研究了J=0,1,2,偶宇称Be等电子序列(BeI—SiⅪ)的高激发态结构.得到了描述高激发态结构的EQDT基本参量(μ,U_(i))以及它们随有效核电荷数增大的变化规律.以这些参量作为输入,获得了类Be体系2sns,2snd和2pnp(双激发态)组态的全部Rydberg能级及混合系数.计算结果表明,在高激发态,我们的理论结果与实验值相对误差在10^(-5)左右.

We calculated the highly-excited states with J = 0, 1 and 2 and even parity of the beryllium isoelectronic sequence by using the eigenchannel quantum defect theory (EQDT). We obtained the EQDT parameters μα and Uiα, of Be-like systems from Be I to SiXI , as functions of effective nuclear charge. Our results indicate that the differences between eigenquantum defects of different channels, which characterize the channel interactions, gradually diminish along this sequence. This isoelectronic behaviour is caused by the competition between electrostatic and spin-orbit interactions along the sequence. A lot of basic atomic data (e. g. all discrete energy levels and their channel mixing coefficients) were evaluated with EQDT parameters as input. As a numerical example, the Lu-Fano plots of Be I were given.