摘要
报导了LP-MOVPE InGaAsP/InP体材料和量子阱的生长.生长的与InP匹配的1.55μm波长的InGaAsP材料,在77K时光荧光半峰宽达18.7meV,InGaAsP/InP量子阱的半峰宽为18.0meV.
The present paper covers the growth of InGaAsP matched with InP and InGaAsP/InP quantum well. The full width half maximum (FWHM) of photoluminescence spectrum at 77 K is 18. 7 meV. The FWHM of InGaAsP/InP quantum well is 18. 0 meV.
出处
《吉林大学自然科学学报》
CAS
CSCD
1993年第4期79-82,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
