脉冲激光作用下碘掺杂的AgBr-T颗粒中光电子衰减特性

Photoelectron Decay Characteristics in Iodide-Doped AgBr-T Grains Excited by a Pulse Laser

利用微弱信号的微波吸收相敏检测技术,在短脉冲激光作用下,测量了在不同碘化物掺杂方式和掺杂量下的AgBrT颗粒中自由光电子和浅束缚光电子随时间的衰减曲线,根据测得的衰减曲线得到了不同条件下的自由光电子寿命(FLT)、自由光电子衰减时间(FDT)及浅束缚光电子衰减时间(SDT)值,通过比较这些值分析了碘化物在AgBrT颗粒中的作用和碘化物对AgBrT颗粒的感光性能的影响。详细分析了碘含量小于、大于以及等于3%的吸收信号和色散信号曲线,讨论了曲线上各个区的影响因素。

The curves of free photoelectron and shallow trapped photoelectron decaying with time in different doping method and doping amount of iodide are measured under the action of short pulsed laser by using microwave absorption phase sensitive technique, which is used to measure faint signal. According to the curve, the lifetime values and the decay time values of free photoelectron and shallow trapped photoelectron under different condition are obtained. By comparing these values, the work of iodide in AgBr T grain and its influence on the photographic property of AgBr T are analyzed. In addition, the absorbed and dispersive signals with the iodide amount less than, more than, and equal 3% are analyzed in detail, and the influencing factors on every section are discussed.