2.6～2.8GHz 100W硅微波脉冲功率晶体管

2.6～2.8GHz 100W Silicon Microwave Pulsed Power Transistor

研究并制造了2.6～2.8GHz输出功率100W、脉宽1μs、占空比25%、增益7dB、效率35%的硅微波脉冲功率晶体管。本文介绍了该器件的设计考虑和采用的工艺技术,给出了研制结果。

Silicon microwave pulsed power transistor delivering 100W output power with 7dBgain and 35% collector efficiency at the frequency band of 2.6~2.8GHz under the conditions of 1mspulse width and 25% duly cycle has been developed and manufactured successfully. In this paper,transistor design considerations and critical wafer fabrication processes as well as the researchresults are presented.