摘要
研究并制造了2.6~2.8GHz输出功率100W、脉宽1μs、占空比25%、增益7dB、效率35%的硅微波脉冲功率晶体管。本文介绍了该器件的设计考虑和采用的工艺技术,给出了研制结果。
Silicon microwave pulsed power transistor delivering 100W output power with 7dBgain and 35% collector efficiency at the frequency band of 2.6~2.8GHz under the conditions of 1mspulse width and 25% duly cycle has been developed and manufactured successfully. In this paper,transistor design considerations and critical wafer fabrication processes as well as the researchresults are presented.
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第12期45-47,51,共4页
Semiconductor Technology
关键词
硅
微波
脉冲
功率晶体管
内匹配
silicon
microwave
pulse
power transistor
internal impedance matching