摘要
文章研究磷化铟(InP)基异质结双极晶体管(HBT)和PIN光电二极管(PIN-PD)单片集成技术,利用器件的小信号等效电路详细计算了长波长PIN/HBT光电子集成电路(OEIC)光接收机前端等效输入噪声电流均方根(RMS)功率谱密度。分析表明:对于高速光电器件,当频率在100MHz～2GHz范围内时,基极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用;频率大于5GHz时,集电极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用。在上述结论的基础上,文章最后讨论了在集成前端设计的过程中减小噪声影响的基本方法。
The Root Mean Square (RMS) power spectral density of equivalent input noise currents from the small-signal model of InP-based PIN/HBT monolithically integrated photoreceiver front-ends is calculated in this paper. The result demonstrates that, for different kinds of high-speed photoelectric devices, the base current shot noise and base resistance thermal noise dominate in the frequency range of 100 MHz to 2 GHz, and both collector current shot noise and base resistance thermal noise are critical for frequencies beyond 5 GHz. Finally, based on the above analysis, the fundamental design rules are discussed to minimize the noise in integrated front-ends.
出处
《中兴通讯技术》
2004年第4期45-47,共3页
ZTE Technology Journal
关键词
PIN
HBT
光接收机
功率谱密度
噪声电流
光电集成电路
photoreceiver front-end
InP-based HBT
PIN photodetector
noise current
power spectral density
