摘要
设计并制造了一种基于SOI材料的直波导可调谐光衰减器,其调制区采用了独特的双脊型PIN结构,增强了注入电流场与光场的重叠,提高电注入效率。该VOA可实现20dB的光功率衰减量,所需要的最大功率为650mW,器件的片内插入损耗约为3.6dB。
A novel variable optical attenuator (VOA)based on SOI material is designed and fabricated.The modulation area is formed of a special transverse PIN junction on a double-rib waveguide,which can enhance the overlap between the electric field and the optical field, and increase the injectionefficiency. The VOA can achieve up to 20dB attenuation with the highest power consumption of 650mW. The on-chip insert loss of the VOA is 3.6dB.
出处
《功能材料与器件学报》
CAS
CSCD
2004年第3期355-358,共4页
Journal of Functional Materials and Devices
基金
上海光科技专项行动计划项目(B-27)资助
