在金属基片上以LNO为过渡层制备Pb(Zr_(0.53)Ti_(0.47))O_3薄膜的电性能(英文)

Electrical properties of sol-gel derived Pb(Zr_(0.53)Ti_(0.47))O_3 thin films on LNO-coated metal substrates

采用溶胶-凝胶法和快速热处理工艺,分别以不锈钢(SS)和镍合金(NC)为基片,成功制备了表面均匀、无裂纹的锆钛酸铅(Pb(Zn0.53Ti0.47)O3,简写为PZT)薄膜。为了缓解金属基片与PZT薄膜之间由于晶格常数和热膨胀系数不同所造成的不匹配状态,引入了镍酸镧(LaNiO3,简写为LNO)薄膜作为过渡层。XRD和SEM结果表明,经过600oC下30min的晶化,PZT薄膜已经由无定型转化为钙钛矿相。以LNO为过渡层,在NC金属基片上制备的PZT薄膜具有较高的介电常数和较低的损耗(1kHz下ε=717,tanδ=0.08),较低的漏电流(50kV/cm下J=2.6×10-7A/cm2)以及较好的铁电性能(+Pr=90μC/cm2,-Pr=14μC/cm2,Ec=32.5kV/cm)。同时,在SS基片上,通过引入LNO过渡层,制备的PZT薄膜也具有比较好的性能。

Smooth and crack free lead zirconate titanate (PZT) thin films were successfully deposited on stainless steel (SS) and nickel-chromium (NC) substrates by sol-gel method combined with a rapid thermal annealing process (RTA). An intermediate LaNiO3 layer was deposited between the PZTthin films and metal substrates to buffer the mismatch. X-ray diffraction and scanning electron micro-scopy (SEM) reveal that amorphous PZT layers are crystallized into a perovskite phase with dense andsmooth surface after annealed at 600oC for 30min. Excellent properties such as high dielectric constantand low dielectric dissipation (ε=717, tanδ=0.08, at 1kHz), low leakage current (J= 2.6×10-7A/cm2, at 50 kV/cm), and typical hysteresis loop (+Pr = 90μC/cm2, -Pr =14μC/cm2, Ec =32.5 kV/cm) are obtained on LNO-coated NC substrates and good results are also obtained on LNO-coated SS substrates.