摘要
根据空基相控阵雷达的工作环境 ,对 4H -SiC材料及SiC功率器件 (SiCMESFET)的特点进行了分析。与GaAs器件相比 ,这种新型器件在空基相控阵雷达领域有广泛的应用前景。同时建立了用于器件CAD技术的SiCMESFET改进型非线性大信号模型 ,这种基于实验测量的模型通过SPICE模拟器对器件的功率特性进行了分析 。
H-SiC material and MESFET power device are analyzed according to the operating environment of the airborne phased array radar A comparison between SiC and GaAs device shows that this novel device finds wide applications in the field of airborne phased array radar An improved nonlinear large signal model of SiC MESFET for device CAD technology is also developed,which is a model based on experimental measurement It is used to analyze the power performance of device through SPICE simulator A good agreement between simulations and measurements is obtained
出处
《空军工程大学学报(自然科学版)》
CSCD
2001年第3期69-72,共4页
Journal of Air Force Engineering University(Natural Science Edition)
基金
总装备部国防预研项目 (8 1 7 3)