摘要
跟踪IGBT芯片能够在高达175℃的温度下工作这一最新发展趁势,已经研制出有相同工作结温的续流二极管和整流二极管。三种类型的芯片全部封装到CIB(整流-逆变-制动斩波)模块(MiniSKiiP的第二代产品)中, 导致了较高的电流密度,在过载和动态负载条件下有十分可观的余量,而且也改善了功率循环能力。
Following the most recent trend in IGBT chips,i, e. that they can be operated up to 175℃ ,new free-wheeling diodes and rectifier diodes have been developed for the same high junction temperature. All three types of chips are packed in to a CIB module-MiniSKiiP second generation-leading to higher current density,a significantly bigger margin under overload and dynamic load conditions,and,also,improved power cycling capability.
出处
《电力电子》
2004年第3期29-32,61,共5页
Power Electronics
