摘要
对能够产生极窄脉冲、高功率的半导体器件进行理论研究和分析 ,并在此半导体器件的基础上组成大功率超宽谱脉冲相干信号源。分析相干超宽带信号在超宽谱雷达 ( UWB)和高功率微波武器 ( HPM)
This paper theoretically analyzes new semiconductor devices, which can generate a very narrow pulse and get very high peak power. A coherent signal source with high power ultra-wide band may be achieved by using the devices. And coherent ultra-wide band signals used in UMB radars and high power microwave weapons (HPM) are analyzed.
出处
《火控雷达技术》
2004年第3期17-19,23,共4页
Fire Control Radar Technology
关键词
雷达发射机
半导体器件
超宽带信号
相干信号源
UWB
高功率
窄脉冲
大功率
ultra-wide band (UWB)
drift step recovery diode (DSRD)
drift step recovery transistor (DSRT)
silicon avalanche shaper (SAS)