摘要
本文从驱动电路设计者的角度对MOS器件的输入电容和密勒电容进行了详细分析,并从器件基本原 理上,对决定栅电荷的寄生元件在不同的栅电压下对栅电荷的作用进行了系统的阐述。最后总结了当前国际 上为降低栅电荷提出的最新MOS器件结构。
This paper analyzes the input and miller capacitance of MOSFET from the standpoint of dnve circuit designer. Explain the parasitic exponents'action to gate charge basing on the semiconductor device physics, A summary which is about the latest device improvement in the world for low gate charge is shown at the end of this paper.
出处
《电子质量》
2004年第9期59-61,80,共4页
Electronics Quality
