期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

铌酸锂晶体铁电畴电极化反转结构的ESEM观察 被引量：3

The observation on the electric polarized inversion structure of ferroelectric domain in LiNbO_3 crystals with ESEM
下载PDF
导出
摘要 本文采用电脉冲极化方法制作出周期性反转电畴微结构。利用热腐蚀法制备出用于环境扫描电镜 (ESEM)研究反转电畴结构的样品。通过ESEM的观察与分析 。 The microstructure of periodical reversal ferroelectric domain was produced by the means of electric impulse polarization. The samples used for research on reversal domain with ESEM were prepared by heat erosion. Through the observation with ESEM and analysis, the general rule of morphosis and formation of periodical reversal domain was obtained.
作者 姚琲 张长亮 薛涛 桑梅 李春艳 王慧
机构地区 天津大学分析测试中心 天津大学精密仪器与光电子工程学院
出处 《现代仪器》 2004年第5期23-25,共3页 Modern Instruments
关键词 铌酸锂晶体 铁电畴 电极化 性反转 周期性 微结构 样品 观察 电脉冲 分析 LiNbO 3 Ferroelectric domain Electric field polarization Inversion ESEM
分类号 TH742 [机械工程—光学工程] O77 [理学—晶体学]
  • 相关文献

参考文献5

  • 1M Yamada, N Nada, M 5aitoh, et al. First-order quasiphase matched LiNbO3 waveguide periodically poled by applying an external field for efficient field blue second-harmonic generation[J]. Applied Physics Letters, 1993,62(5) :435 ～ 436
  • 2姚王非,陈云琳,杨治安,阮永风,陆明.扫描电镜加工铌酸锂晶体电畴反转光栅的研究[J].电子显微学报,1997,16(2):148-151. 被引量：3
  • 3T. Suhara et al. Theoretical analysis of waveguide second- harmonic generation phase matched with uniform and chirped gratings[J]. IEEE. Quantum Electron, 1990,1265
  • 4Mjyers I.E., Eckardt R. C., Fejer M. M. et al, Quasiphase- matched Optical Parametric Oscillators in Bulk Periodically Poled LiNbO3, J. Opt. Soc., Am, B, 1995,12(11):2102 ～ 2116
  • 5Shur V. Y., et al, Recent achievements in Domain Engineering in Lithium Niobate and LithiumTantalate, Ferroelectrics, 2001,257:191 ～ 202

二级参考文献1

  • 1方俊鑫，固体物理学.下，1981年，147页

共引文献2

同被引文献18

  • 1HeYansong,FanJinghong.A SIMPLIFIED MODEL FOR DOMAIN SWITCHING OF FERROELECTRIC CRYSTAL[J].Acta Mechanica Solida Sinica,2004,17(3):189-195. 被引量：1
  • 2贺岩松,范镜泓.单晶铁电畴反转的简化模型[J].固体力学学报,2004,25(4):371-376. 被引量：2
  • 3M.R. Krames, J. Bhat, et al. , High-Power Ⅲ-Nitride Emitters for Solid-State Lighting ,Physica status solidi (a) ,2002,192: 237 ～ 245.
  • 4S. Arulkumaran, M. Sakai, et al., Improved dc characteristics of A1GaN' GaN high-electron- mobility transistors on A1N' sapphire templates, Appl. Phys. Lett. 2002, 81:1131.
  • 5J. P. Bergman, T. Lundstr? m, et al., Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface ,Appl. Phys. Lett. 1996, 69:3456.
  • 6H. Saijo, J. T. Hsu, et al., Mapping of multiple-quantum-well layers and structure of V defects, in InGaN' GaN diodes, Appl.Phys. Lett. 2004, 84:2271.
  • 7R. W. Martin, P. R. Edwards, et al., Cathodoluminescence spectral mapping of Ⅲ-nitride structures, physica status solidi(a) 2004,201:665～672.
  • 8S. A. Galloway, P. Miller, P. Thomas, R. Harmon, Advances in cathodoluminescence characterisation of compound semiconductors with spectrum imaging, physica status solidi(c) 2003,0:1028 ～ 1032.
  • 9Danilatos GD, Review and outline of environmental SEM at present., J. Microsc. 1991,162 : 391～ 402.
  • 10Danilatos GD, Cathodoluminescence and gaseous scintillation in the environmental SEM., Scanning, 1986,8:279 ～ 284.

引证文献3

二级引证文献9

现代仪器
2004年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部