I_(DDQ)测试全面系统化的研究

Systematic and Comprehensive Study on I_(DDQ) Testing

基于稳态电流测试方法的IDDQ 测试 ,因其故障覆盖率高 ,在集成电路测试中得以广泛应用。IDDQ测试的概念比较简单 ,但实现并不容易 ,特别是当今SOC和深亚微米技术的影响使得其实现更为复杂 ,有必要作以全面、系统化的研究。本文的第 1节概括地总结了IDDQ测试的发展和目前的现状 ,对IDDQ测试广泛应用的原因作了阐述。第 2节论述的是测试机理 ,同时用一些重要的术语和数据来说明深亚微米等技术对IDDQ测试的影响。第 3节研究的是适于IDDQ测试的各种电流测量方法和结构。第 4节深入地研究了CMOS电路中的物理缺陷及其电流测试方法 ,并用大量的图文数据作以详细说明。第 5节讨论的是IDDQ测试的测试图形生成方法。第 6节对深亚微米技术对IDDQ测试的影响以及测试中要注意的问题作了说明。

I DDQ testing is an IC testing method based upon the measurement of steady state power-supply current, and is now widely used in the industry due to high fault coverage it achieves. It is a simple concept, yet in today's world of SOC and very deep sub-micron technology, the implementation of I DDQ testing is not so easy, and must be addressed. This paper gives a systematic and comprehensive description on many different aspects of I DDQ testing. Section 1 gives a historical overview and the present status of I DDQ testing. Also, the discussion is given on why I DDQ testing has become popular with test professionals. Section 2 discusses the basic principle of I DDQ testing along with the essential items and necessary data related to it. Section 3 studies verities of current measurement methods and constructs for I DDQ testing. In section 4, on physical defects with in-depth discussion and examples is used to illustrate related test methods. Data with additional information from case studies is used to explain the effectiveness of I DDQ testing. In Section 5, design issues, design styles, I DDQ test vector generation and simulation methods are discussed. Section 6 studies whether I DDQ testing is useful for deep submicron technologies.