MOS结构低温负偏压温度不稳定性
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12002年IEEE国际可靠性物理年会论文集论文摘要（2）——负偏压温度不稳定性对数字电路可靠性的影响[J].电子产品可靠性与环境试验,2003(4):63-63.
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2Bo Zhao Yu Wang Hua-Zhong Yang Hui Wang.NBTI Impact on RF Front End in Wireless Sensor Networks[J].Journal of Electronic Science and Technology of China,2009,7(4):362-369.
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3刘红侠,郝跃.pMOS器件的热载流子注入和负偏压温度耦合效应[J].Journal of Semiconductors,2005,26(5):1005-1009.
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4刘红侠,郝跃.深亚微米pMOS器件的HCI和NBTI耦合效应与物理机制[J].Journal of Semiconductors,2005,26(9):1813-1817. 被引量：2
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5朱诗倩,石艳玲.数字电路中NBTI效应仿真及建模方法的研究[J].微电子学,2015,45(2):209-212.
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6曹艳荣,马晓华,郝跃,胡世刚.Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor[J].Chinese Physics B,2010,19(4):402-407.
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7曹艳荣,马晓华,郝跃,田文超.The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors[J].Chinese Physics B,2010,19(9):564-569.
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8陈建军,陈书明,梁斌,刘必慰.Negative bias temperature instability induced single event transient pulse narrowing and broadening[J].Journal of Semiconductors,2010,31(12):38-42. 被引量：2
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9CAO Yan-Rong,MA Xiao-Hua,HAO Yue,ZHU Min-Bo,TIAN Wen-Chao,ZHANG Yue.Negative Bias Temperature Instability ＂Recovery＂ under Negative Stress Voltage with Different Oxide Thicknesses[J].Chinese Physics Letters,2011,28(1):175-178.
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10马晓华,曹艳荣,郝跃.Study on the negative bias temperature instability effect under dynamic stress[J].Chinese Physics B,2010,19(11):604-607.
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