恒定辐照下一维HgCdTe环孔PN结光生载流子浓度的计算

Calculation of Photocarrier Concentration of a 1-D Loophole HgCdTe PN Junction under Steady-State Incidence

通过求解一维 HgCdTe 环孔 PN 结连续性方程,得到了恒定辐照下光生载流子浓度的一般表达式,并对结果进行了分析讨论。

The general expressions of photocarrier concentration of a loophole HgCdTe PN junction under steady-state incidence is presented in this paper by solving the one-dimensional continuity equation of photocarriers. The results are discussed.