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ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS 被引量:3

ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS
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摘要 This paper is devoted to the long time behavior for the Drift-diffusion semiconductor equations. It is proved that the dynamical system has a compact, connected and maximal attractor when the mobilities are constants and generation-recombination term is the Auger model; as well as the semigroup S(t) denned by the solutions map is differential. Moreover the upper bound of Hausdorff dimension for the attractor is given. This paper is devoted to the long time behavior for the Drift-diffusion semiconductor equations. It is proved that the dynamical system has a compact, connected and maximal attractor when the mobilities are constants and generation-recombination term is the Auger model; as well as the semigroup S(t) denned by the solutions map is differential. Moreover the upper bound of Hausdorff dimension for the attractor is given.
出处 《Acta Mathematica Scientia》 SCIE CSCD 2004年第3期385-394,共10页 数学物理学报(B辑英文版)
基金 This work is supported by the Funds of the Nature Science Research of Henan(10371111).
关键词 Drift-diffusion model auger term ATTRACTOR Housdorff dimensions Drift-diffusion model, auger term, attractor, Housdorff dimensions
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