a-Si∶H/a-Ge∶H超晶格的电学特性研究

Investigation on Electrical Characteristic of Reactive-sputtering a-Si:H/a-Ge:H Superlattices

测量了反应溅射 a-Si∶H/a-Ge∶H 超晶格的平行电导和垂直电导,研究了超晶格的结构和输运机理;实验观察到了强场下垂直电导的指数增强效应,得到阱层 a-Ge∶H 的深隙态密度N_g=1.9×10^(18)cm^(-3)·ev^(-1).对实验结果作了初步讨论.

The structural and transport properties in reactive-sputtering a-Si:H/a-Ge:H superlattices are studied by parallel conductivity σ_(11)andperpendicular conductivity σ_(?)measurements.The exponential enhancementeffect of perpendicular conductivity of superlattices are observedexperimentally.The deep gap state density of a-Ge:H well layer obtainedis about Ng=1.9×10^(18)cm^(-3)eV^(-1).Results are discussed.