摘要
本文详细地研究了氧等高离子体造成辐照损伤的Si/SiO_2系统在氢、氧等离子体退火中随压强、温度及退火时间的变化关系。结果表明射频退火对消除辐照损伤是极为有效的,并发现固定电荷密度N和界面态密度N_(?)分别与样品放置方式和气氛密切相关。
H_2, O_2 RF(radio frepuency) plasma annealing as a function of pressure, tempera-ture, and time is studied in detail when the Si/SiO_2 system is radiated by O_2 plasma.The results show that RF H_2 and O_2 plasma annealings can effectively remove radiateddemage, and that the fixed charges N and interface states N_s are Closely associated withthe placed pattern of the wafer and the annealing ambients, respectively.
出处
《兰州大学学报（自然科学版）》
CAS
CSCD
北大核心
1993年第3期78-82,共5页
Journal of Lanzhou University(Natural Sciences)
关键词
等离子退火
辐照损伤
硅
二氧化硅
interface defects
plasma annealing
intarface states
Si/SiO_2 system
radiated damage
