退火冷却速率对a—Si_(1-x)Ge_x:H薄膜电导的影响

Influence of Cooling Rate of Thermal Annealing on Dark Conductivity in a--Si_(1-x)Ge_x:H Alloys Films

本文比较全面地研究了退火冷却(即热淬火)对反应溅射a—si_1_rGe_x:H薄膜电导的影响,测量了热淬火态引起的热诱导电导.结果表明:电导的改变强烈地依赖于热历史:热诱导电导向平衡态的弛豫过程遵从指数衰减规律;弛豫时间是热激活式的.

We have investigated the influences of fast cooling of thermal annealing (thermalquenching) on conductivity in reactively sputtered a--Si_(1-x)Ge_x:H films. Thermal—induced conductivity caused by the thermal quenching has been maeasured. The resultsshow that the change in dark conductivity depends strongly on thermal history. Therelaxafios of Thermal-induced conductivity towards equilibrium follows a stretchedexponential law. The relaxation time is thermally activated.