摘要
本文首次报道了用溅射反应法制备的 a-GeCN_x∶H 薄膜的制备工艺、红外和拉曼谱的特性,并观测到因掺碳引起的新的 N-CH_n 的红外吸收峰.
IR,Raman properties and preparation conditions of the a-GeC_N:H films pre-pared by rf-reactive sputtering method are reported for the first time.A new absorptionpeak related to N-CHn was observed due to the incorporation of carbon atoms.
出处
《兰州大学学报（自然科学版）》
CAS
CSCD
北大核心
1993年第4期69-72,共4页
Journal of Lanzhou University(Natural Sciences)
关键词
溅射法
薄膜
红外光谱
散射谱
sputtering method
thin film
Infrared spectrum
Raman spectrum
