摘要
本文报道利用分子束外延(MBE)技术,采用高纯ZnCl_2作掺杂源,成功地进行了n—型ZnSe:Cl的分子束外延生长。n-ZnSe:Cl/p-GaAs异质结构的伏-安(I—V)特性和热探针测试显示外延层呈n型导电特性。反射高能电子衍射(RHEED)和x射线衍散谱测量表明ZnSe:Cl外延层具有较好的晶体质量。
High-quality n-type ZnSe layers have been successfully grown on (100) GaAssubstrates by molecular beam epitaxy using ZnCl_2 as the doping material. Then-type conduction has been confirmed by the current-voltage characteristics ofCl-doped ZnSe heterojunctions formed on GaAs substrates. The RHEED patternswere observed, indicating good crystalline quality. The analysis of x-ray dif-fraction shows that the Cl-doped ZnSe layers is perfect.
基金
国家自然科学基金
国家863青年基金
