1S Selberherr. MOS Device Modeling at 77 K. IEEE Trans.Electron Devices, 1989, 36(8): 1464-1474.
2Properities of Gallium Arsenide, EMIS Datareviews Series. London, New York: INSPEC, Institute of Electronic Engineers, 1986. (2).
3J S Brodsky, R M Fox, D T Zweidinger, et al. A Physics-based, Dynamic Thermal Impedance Model for SOI MOSFET's. IEEE Trans. Electron Devices, 1997,44(6): 957-964.
