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Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

Electrical Performance of Electron Irradiated SiGe HBT and Si BJT
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摘要 The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed. The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2004年第6期706-708,共3页 材料科学技术(英文版)
基金 This project is financially supported by the National Natural Science Foundation of China(No.10075029 and 69836020) National“863”Advanced Research Project of China(No.2002AA3Z1230).
关键词 Electron irradiation SiGe HBT Si BJT Electrical performance Electron irradiation SiGe HBT Si BJT Electrical performance
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