摘要
采用自行研发的 4英寸InGaP/GaAsHBT技术 ,设计和制造了 10Gb/s光调制器驱动电路 .该驱动电路的输出电压摆幅达到 3Vpp,上升时间为 34 2ps(2 0～ 80 % ) ,下降时间为 37 8ps(2 0～ 80 % ) ,输入端的阻抗匹配良好 (S11=- 12 3dB @10GHz) ,达到 10Gb/s光通信系统 (SONETOC 192 ,SDHSTM 6 4 )的要求 .整个驱动电路采用 - 5 2V的单电源供电 ,总功耗为 1 3W ,芯片面积为 2 0 1× 1 38mm2 .
A 10 Gb/s driver IC for optic modulator has been implemented using our 4-inch InGaP/GaAs HBT process. The driver IC operates up to 10 Gb/s with an output voltage swing of 3Vpp and 34.2 ps (20 to 80%) of tr and 37.8ps (20 to 80%) of tf. and input return losses of -12.3dB at 10 GHz, which make the driver suitable for 10 Gb/s optic telecommunication systems (SONET OC-192, SDH STM-64). A single power supply VEE is -5.2V, and the power consumption is l.3 W. The die size is 2.01 × 1.38 mm2.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2004年第11期1782-1784,共3页
Acta Electronica Sinica
基金
国家重大基础研究项目 (No G2 0 0 0 0 0 6830 4 0 3)
中国科学院重大方向性项目 (No KGX2 1 0 1 )
关键词
光发射机
光调制器驱动电路
INGAP/GAAS
HBT
Heterojunction bipolar transistors
Integrated circuit layout
Integrated circuit manufacture
Integrated circuit testing
Optical communication
Semiconducting gallium compounds
