High-k材料研究进展与存在的问题

The Progress and Problems of High-k Materials

随着集成电路的飞速发展,SiO2作为传统的栅介质将不能满足MOSFET器件高集成度的要求,需要一种新型High-k材料来代替传统的SiO2,这就要综合考虑以下几个方面问题:(1)介电常数和势垒高度;(2)热稳定性;(3)薄膜形态;(4)界面质量;(5)与Si基栅兼容;(6)工艺兼容性;(7)可靠性。本文综述了几类High-k栅介质材料的研究现状及存在的问题。目前任何一种有望替代SiO2的栅介质材料都不能完全满足上述几点要求。但是,科学工作者们已经发现了几种有希望的High-k候选材料。

With the rapid development of greater integrated circuit, it is necessary to seek novel High-k dielectrics to substitute the traditional SiO2 gate dielectric because SiO2 does not satisfy the need of high integration of MOSFET devices. Several aspects must be considered(1) permittivity; (2) thermodynamic stability; (3)film morphology; (4)interface quality; (5)gate compatibility; (6)process compatibility and (7) reliability. In this paper, the actualities and existent problems of some High-k candidates were briefly reviewed. Although none of these High-k candidates could meet all of these considerations, scientists and engineers have been identified several promising High-Amaterials.