金属有机分解法制备无铅K_(0.5)Bi_(0.5)TiO_3铁电薄膜

Preparation of Lead-free K_(0.5)Bi_(0.5)TiO_3 Ferroelectric Thin Films by Metalorganic Decomposition Method

采用金属有机分解法(MOD)在p型Si(111)衬底上制备了K0.5Bi0.5TiO3(KBT)薄膜。用X射线衍射技术研究了薄膜的结构和结晶性。同时还研究了薄膜的绝缘性和存储性能。结果发现在740℃下退火4min的KBT薄膜呈钙钛矿结构;在0~8V范围内,薄膜的漏电流小于1.5×10-9A;在-12^+8V的偏压范围内,C-V记忆窗口宽度为10V。

K0.5Bi0.5TiO3 thin films were grown on p-Si(111) substrate by metalorganic decomposition method. The structural characteristic and crystallization of the films were examined by X-ray diffraction (XRD). The insulation characteristic and memory effect of the films were also studied. The results show that the KBT films annealed at 740°C for 4 min present perovskite phase; the leakage current is below 1.5×10-9 A in the applied voltage range of 0-8 V; the memory window in C-V curve is 10 V in the applied voltage range of -12-8 V.