硫增感AgBrCl立方体微晶中光电子衰减行为的研究

Study of the Photoelectron Decay Behavior in Sulfur-sensitized AgBrCl Cubic Microcrystal

利用微波吸收相敏检测技术并结合短脉冲激光曝光,测量了硫增感条件下AgBrCl立方体微晶感光材料的光电子时间衰减谱。分析了光电子一级衰减区域与增感温度的关系,确定了硫增感的陷阱效应对光电子衰减时间和光电子不同一级衰减区域的影响,并获得了增感过程中生成浅电子陷阱效果的最佳增感条件。

The time spectrum of the photoelectron decay in the sulfur-sensitized AgBrCl microcrystal was measured by combining microwave absorption dielectric spectrum technique with short pulse laser exposure. The relation between the first-order decay section of photoelectron and the sensitized temperature was analyzed. The influence of trap effect resulting from sulfur sensitization on the different first order-decay section of the photoelectron decay time was determined. The sensitization condition of the optimal shallow electron trap effect is obtained.