CVT法生长GaP多晶

Polycrystalline GaP Growth by CVT Method

阐述了CVT(化学气相输运)法生长GaP的基本反应和输运速度,采用CVT法生长出了GaP多晶。设计了石英管的结构以制造出一个局部的低温区域,防止了CaP在管壁的生长。生长出的GaP多晶相对密度为98％,红外透过率达到30％,努普硬度为611kg／mm2。散射颗粒测试表明主要的光散射颗粒为多晶中存在的孔隙。

The basic reactions and transport velocity of polycrystalline GaP grown by CVT (chemical vapor transport) method were explained. Polycrystalline GaP was grown by CVT method. The configuration of quartz glass tube was designed to make a local cold spot, thus the growth on the wall of the tube was prevented. The results show that the relative density of as-grown GaP is 98%, transparency reaches 30% in infrared region, and Knoop hardness is 611 kg/mm2. The scattering grain test indicates that the main scattering is attributed to the holes existing in the polycrystal.