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一族Nd:Y_xGd_(1-x)VO_4混晶性质比较及其调Q性能研究

Comparisons on the Properties of a Class of Nd:Y_xGd_(1-x)VO_4 Mixed Crystals and Its Q-switching Laser
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摘要 Czochralski法成功生长了一系列不同Gd／Y的低掺杂Nd:YxGd1-xVO4混晶,并对它们的一些基本性质进行了比较,发现随着Gd含量的增加,晶体晶胞a,c轴常数呈线性增长,故YVO4和GdVO4晶体可以实现无限互溶。少量Gd掺杂可使混晶晶体比热和荧光寿命增大,并有效地增强了其荧光强度。我们对该晶体的低功率泵浦下的Cr4+:YAG调Q激光性能也进行了研究,发现Nd:YxGd1-xVO4混晶具有良好调Q性能。 A class of Nd:YxGd1-xVO4 mixed crystals with low Nd3+ ion concentrations was successfully grown by the Czochralski method. The elementary properties of them were investigated and found that the a, c contents of one cell were linear with the Gd content in mixed crystal. The infinite soluble Nd:YxGd1-xVO4 solution should be existed between YVO4 and GdVO4. The little Gd doping enhanced the properties of specific heats, fluorescence lifetimes and so on. Passive Q-switched properties of the Nd:YxGd1-x VO4 laser with a Cr4 + :YAG crystal saturable absorber are experimentally investigated.
作者 秦连杰 姜付义 孟宪林 徐惠忠 侯学元 祝俐 刘均海
机构地区 烟台大学环境与材料工程学院 山东大学
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2004年第5期868-870,834,共4页 Journal of Synthetic Crystals
关键词 掺钕钒酸钇 掺钕钒酸钆 混晶 晶体生长 调Q性能 激光晶体 Czoehralski法 <Keyword>Nd:Y_xGd_(1-x)VO_4 crystal growth properties laser Q-switching
分类号 O614.511 [理学—无机化学] TN244 [电子电信—物理电子学]
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参考文献12

  • 1Wang C Q, Chow Y T, et al. A Cmparative of the Laser Performance of Diode-laser-pumped of Nd:YVO4 and Nd:GdVO4[J]. Appl. Phys. B, 2000, 70:769.
  • 2Liu J H , Shao Z S , Zhang H J , et al. Diode-laser-array end-pumped Nd:GdVO4/KTP Green Laser[J]. Opt. Commun., 2000, 173:311.
  • 3Zhang H J, Liu J H , Wang J Y , et al. Characterization of the Laser Crystal Nd:GdVO4 [J]. J. Opt. Soc. Am. B, 2002, 19:18.
  • 4Qin L J, Meng X L, Du C L , et al. LD-pumped Actively Q-switched Nd:GdVO4/KTP Red Laser[J]. Opt. Laser Technol.,2003, 35(4):257.
  • 5Liu J H , Ozygus B, Yang S H , et al. Efficient Passive Q-switching Operation of a Diode-pumped Nd:GdVO4 Laser with a Cr4+:YAG Saturable Absorber[J]. J. Opt. Soc. Am. B, 2003, 20(4):652.
  • 6Qin L J, Meng X L, et al. A Diode-pumped Passively Q-switched Nd:GdVO4 Laser with a GaAs Saturable Absorption[J].Opt. Laser Technol. , in press.
  • 7Studenikin P A, Zagumennyi A I, et al. GdVO4 as a New Medium for Solid-state Lasers: Some Optical and Thermal Properties of Crystals Doped with Cd3+, Tm3+, and Er3+ Ions[J]. Quantum Electron,1995,25:1162.
  • 8Qin L J , Meng X L , Shen H Y, et al. Thermal Conductivity and Refractive Indices of Nd:GdVO4 Crystal[J]. Cryst. Res. Technol .,2003,38(9):793.
  • 9Qin L J , Meng X L , Du C L, et al. Growth and Properties of Mixed Crystal Nd:YGdVO4[[J]. J. Alloys and Compounds, 2003,354:259.
  • 10Qin L J, Meng X L, Liu J H, et al. Influence of the Different Gd/Y Ratio on the Properties of Nd:YxGd1-x VO4 Mixed Crystals[J]. Chem. Phys. Lett., 2003, 380:273.
人工晶体学报
2004年 第5期

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