X射线光刻技术应用现状与前景

Application status and prospect of X-ray lithography technology

鉴于接近式X射线光刻技术具有高分辨率、大焦深、大曝光像场、高产量、大工艺宽容度、易于扩展到50nm及50nm以下规则等诸多优点,它非常适合应用于100nm及100nm以下集成电路的生产。本文首先简要介绍了国际上X射线光刻技术(PXL)现状,再分别介绍X射线光刻技术在纳米电子学研究、单片微波集成电路(MMIC)生产、硅基超大规模集成电路生产中的应用现状与前景,并对国内的X射线光刻技术的近期研究进展进行了简要介绍。

Because of its many merits, such as high resolution, large depth of focus, large field size, high throughput, large process latitude, easy extendibility to 50 nm and below ground rule, and so on, the Proximity X-ray Lithography (PXL) is very attractive for the 100 nm and smaller ground rule integrated circuit manufacturing. In this paper, the international research and development status of PXL is briefly introduced firstly, and both its application status and prospect in nanoelectronics research, Monolithic Microwave Integrated Circuits (MMIC) production and silicon-based Ultra Large Scale Integrated Circuits (ULSIC) production are described, and the recent research progress in home PXL is also presented briefly.