反应离子束溅射沉积和还原退火工艺制备VO_x多晶薄膜

Fabrication of Polycrystalline VO_x Films through Reactive Ion-beam Sputtering and Reductive Annealing

通过反应离子溅射沉积和后退火工艺制备出优质微测辐射热计用的氧化钒薄膜。对薄膜退火前后进行了扫描电子显微镜分析,结果表明,制备的VOx多晶薄膜致密均匀,退火后晶粒尺寸变大。电学测试表明,在室温时薄膜的方块电阻约为50kΩ,电阻温度系数为-0.022/K,满足制作高性能微测辐射热计的要求。

VO_x films for high-quality microbolometer are fabricated through reactive ion beam sputterring and reductive annealing.SEM images of deposited sample and annealed sample indicate that polycrystalline VO_x films are smooth and compact,and grain size becomes bigger during reductive annealing process. The sheet resistance of the films is detected to be about 50kΩ and temperature coefficient of resistance is near -0.022/K which meet the requirements of high-quality microbolometer.