摘要
通过醋酸铅、硝酸锆、钛酸丁酯分别制备独立稳定的前驱单体 ,采用Sol Gel反提拉涂膜技术在基片Pt/Ti/SiO2 /Si上制备PZT铁电薄膜。本文讨论了制备工艺对薄膜质量的影响 ,比较了在不同的退火速率 ,退火温度及退火气氛工艺中 ,制备的PZT铁电薄膜结构、性能的差异 ,并对其形成原因进行了分析。
Sol-Gel PZT films were prepared by reversed-dip-coating of precursor-monomers of lead acetate trihydrate[Pb(OCOCH 3) 2·3H 2O],zirconium nitrite(Zr(NO 3) 4·5H 2O),and titanium butoxide Ti(OC 4H 9) 4 on Pt/Ti/SiO 2/Si substrates,respectively.The films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) to understand influence of film growth conditions on its properties,including annealing temperature,cooling rate,and oxygen pressure,etc.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2004年第5期377-380,384,共5页
Chinese Journal of Vacuum Science and Technology
