硅纳米线的制备与生长机理

Preparation and Growth Mechanism of Silicon Nanowires

硅纳米线是一种新型的一维半导体光电材料。本文较系统地介绍了硅纳米线在制备技术、生长机理方面的研究现状与最新进展 ,主要就激光烧蚀法、化学气相沉积法、热气相沉积法及溶液法等制备方法和基于气 液 固机理的生长机理、氧化物辅助生长机理及固 液 固生长机理等作了较为详尽的论述。

Silicon nanowire is a new kind of one-dimensional semiconductor optoelectronic material. The recent development of pre- paration and growth mechanism of silicon nanowires are sysmetically introduced. The laser ablation method, chemical vapor deposition(CVD) method, thermal vapor deposition method, solution-grown method etc. and growth mechanisms including vapor-liquid-solid(VLS) mechanism, oxide-assisted growth mechanism, solid-liquid-solid(SLS) growth mechanism are mainly discussed.