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电沉积硅技术的历史和发展趋势 被引量:4

History and Development Direction of Silicon Electrodeposition
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摘要 介绍了沉积硅的几种方法。常规的沉积方法为固体粉末法和气相沉积法。固体粉末法要消耗大量的硅铁,且硅层存在气孔;气相沉积法由于涉及气体,其保护措施和密闭性的严格要求使其应用受到了严格的限制。新型的沉积方法为电沉积法。电沉积法涉及高温熔盐,但其所得渗硅层质量性能良好,很受国外工作者的欢迎。本文介绍了各方法的影响因素,回顾了电沉积硅的历史,指出电沉积硅法具有良好的发展趋势。 The deposition methods of silicon are introduced in this paper. Solid powder and chemical (vapor) deposition are normal methods. The solid power method would consume a large of silicon ferry and form a layer of silicon with pore. The chemical vapor deposition uses vapor whose safeguard and seal make the method be restricted. The modern method is electrodeposition. The method involves high temperature melt salts, its silicon layer has good performances, many foreign scientists has been studying the method. The influence factors of all methods are discussed in this paper.The history of electrodeposition of silicon is reviewed and the development direction of electrodeposition of silicon is points out.
出处 《湿法冶金》 CAS 2004年第4期188-190,共3页 Hydrometallurgy of China
关键词 电沉积法 沉积方法 固体粉末 气相沉积法 新型 消耗 熔盐 渗硅 气孔 硅铁 electrodeposition silicon history direction
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