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扩镓Si基溅射Ga_2O_3氮化反应生长GaN薄膜 被引量：3

Growth of GaN Films by Nitriding Ga_2O_3 Films Sputtered on the Ga-diffused Si(111)Substrate
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摘要 采用射频磁控溅射在扩镓硅基上溅射Ga2O3 氮化反应生长GaN薄膜。用X射线衍射 (XRD)、扫描电镜(SEM)、选区电子衍射 (SAED)、光电能谱 (XPS)和荧光光谱 (PL)对样品进行结构、形貌、组分和发光特性的分析。XRD、SAED和XPS分析证明 ,采用此方法得到六方纤锌矿结构的GaN多晶膜。SEM显示薄膜由均匀、结合紧密的纳米微晶粒组成 ,其直径约为50～100nm。PL发光谱显示位于344nm处 ,相对于365nm明显蓝移的带边峰 。 GaN films were grown through nitriding the Ga 2 O 3 films formed on the Ga-diffused Si(111)subˉstrate by r.f.magnetron sputtering.X-ray diffraction(XRD),scanning electron microscopy(SEM),selected area electron diffraction(SAED),X-ray photoelectron spectroscopy(XPS)and photoluminescence(PL)were employed to analyze the structure,surface morphology and component and optical emission properties of the prepared samples.The XRD,SAED and XPS patterns indicated that the growing films were of hexagonal polyˉcrystalline GaN films and the SEMimage showed that the films were composed of uniform GaN nanoparticals with diameters of50～100nm.The PLpeak was at344nmwhich was blue shifted fromthat of the bulk GaN by21nm.This phenomenon might be attributed to the recombination of free-carrier.
作者 王书运 孙振翠 曹文田 薛成山
机构地区 山东师范大学物理与电子科学学院 山东交通学院基础部
出处 《分析测试学报》 CAS CSCD 北大核心 2004年第6期65-68,共4页 Journal of Instrumental Analysis
关键词 射频磁控溅射 氧化镓薄膜 氮化镓薄膜 扩镓硅基 结构 形貌 组分分析 发光特性 自由载流子 半导体材料 r.f.magnetron sputtering Ga 2 O 3 film GaN film Ga-diffused Si(111)substrate
分类号 TN304.2 [电子电信—物理电子学]
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参考文献12

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同被引文献27

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  • 9BOOJ H, ROHR C, HOW, et al. MOCVDof BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer [J].J Cryst Growth, 1998, 189/190 (1-2): 439-444.
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分析测试学报
2004年 第6期

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