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离子束增强沉积氮化铝薄膜的电绝缘性能研究 被引量：3

Dielectric Properties of AlN Thin Films Formed by Ion Beam Enhanced Deposition
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摘要 AlN薄膜作为绝缘层材料,在微电子领域的高温高功率器件中有很大应用潜力。采用离子束增强沉积(IBED)法制备了AlN薄膜,采用X光电子能谱(XPS)和电容-电压/电流-电压(C-V/I-V)等方法对AlN薄膜的微观结构和绝缘性能进行了研究,得到了影响薄膜电绝缘性能的主要参数。研究结果表明,沉积过程中向IBED系统通入一定的氮气可有效提高薄膜的N/Al,使其接近化学计量比(从0.53∶1到0.81∶1)及电绝缘性能(击穿电场约为1.42MV/cm)。 AlN thin films are promising to be used as insulator for high-temperture and high-power devices in microelectronics fields. AlN thin films were prepared through ion-beam-enhanced-deposition (IBED) system. The microstructure and dielectric properties of AlN thin films were studied through XPS and C-V / I-V test. Some important dielectric parameters for AlN thin films were obtained. N_2 gas added into IBED system during deposition could enhance N/Al ratio (from 0.53∶1 to 0.81∶1) near to stoichiometrical structure and improve dielectric properties of AlN thin films (breakdown field to about 1.42 MV/cm).
作者 宋朝瑞 俞跃辉 邹世昌 郑志宏
机构地区 中国科学院上海微系统与信息技术研究所离子束重点实验室
出处 《压电与声光》 CSCD 北大核心 2004年第6期494-496,502,共4页 Piezoelectrics & Acoustooptics
关键词 ALN薄膜 离子束增强沉积(IBED) 电绝缘性能 AlN thin film IBED dielectric properties
分类号 TN3 [电子电信—物理电子学]
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参考文献9

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共引文献1

同被引文献32

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压电与声光
2004年 第6期

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